IGBTs suit induction heating and resonant switching applications

International Rectifier announces a new pair of efficient and reliable ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) suited for induction heating and resonant switching applications, such as welding and high power rectification.

The 1,200-V IGBTs incorporate the company's thin-wafer trench technology to offer performance features including low VCE(on) and ultra-fast switching to reduce power dissipation and achieve higher power density. In addition, the devices feature a 1,300-V repetitive peak rating for added system reliability.  The new IGBTs are co-packaged with a low forward-voltage, high peak current, soft forward-recovery diode optimized for resonant zero current turn-on operation.

These new IGBTs complement the company's family of IGBTs for motor drive and hard switching applications.

For more information, contact International Rectifier, 233 Kansas St., El Segundo, CA 90245. Phone: (310) 252-7105.