New power MOSFETs slash conduction losses

Infineon Technologies expands the application scope of its OptiMOS power MOSFET portfolio, introducing a family of 200 and 250 V devices well suited for synchronous rectification in 48 V systems, dc-dc converters, uninterruptable power supplies (UPS), and inverters for dc motor drives. Featuring the lowest Figure of Merit (FOM) compared to alternative devices, OptiMOS 200 and 250 V technology slashes conduction losses in system designs by one-half, according to company sources.

Engineers that until now designed 48 V power supplies using a diode-based rectification stage in the SMPS (switched mode power supply) now have an alternative that enables overall efficiency levels exceeding 95%, which is 2% higher than typical today and translates to 30% lower power losses, according to Infineon. This fulfills growing demands for higher efficiency in telecommunication networking markets, where business customers are seeking economic and market positioning advantages based on “green” technology infrastructure.

OptiMOS 200 and 250 V family devices feature RDS(on) (on-state resistance) 50% lower than alternative devices, which translates to the lowest possible power losses in high current applications. The industry’s lowest gate charge (Qg) – up to 35% less than alternatives – contributes to low losses and fast switching in switched mode applications like isolated dc-dc converters for telecom applications. Additionally, the device family allows system cost improvement through reduced device paralleling; the ability to use smaller heat sinks as a result of the low on-state resistance; and a fast and low complexity design process due to optimized switching behavior.

For more information, contact Infineon Technologies North American Corp., 640 N. McCarthy Blvd., Milpitas, CA 95035. Phone: 408-503-2791.